ksp92/ 93 pnp epitaxial silicon transistor high voltage transistor absolute maximum ratings (t a =25 c ) electrical characteristics (t a =25 c ) * pulse test: pw 300 m s , duty cycle 2% characteristic symbol rating unit collector-base voltage : ksp92 : ksp93 collector-emitter voltage : ksp92 : ksp93 emitter-base voltage collector current collector dissipation (t a =25 c ) derate above 25 c collector dissipation (t a =25 c ) derate above 25 c junction temperature storage temperature v cbo v ceo v ebo i c p c p c t j t stg -300 -200 -300 -200 -5 -500 625 5 1.5 12 150 -55 ~ 150 v v v v v ma mw mw/ c w mw/ c c c characteristic symbol test conditions min max unit collector-base breakdown voltage : ksp92 : ksp93 * collector-emitter breakdown voltage : ksp92 : ksp93 emitter-base breakdown voltage collector cur-off current : ksp92 : ksp93 emitter cut-off current * dc current gain * collector-emitter saturation voltage * base-emitter saturation voltage current gain bandwidth product collector base capacitance : ksp92 : ksp93 bv cbo bv ceo bv ebo i cbo i ebo h fe v ce (sat) v be (on) f t c cb i c = -100 m a , i e =0 i c = -1ma, i b =0 i e = -100 m a , i c =0 v cb = -200v, i e =0 v cb = -160v, i e =0 v eb = -3v, i c =0 v ce = -10v, i c = -1ma v ce = -10v, i c = -10ma v ce = -10v, i c = -30ma i c = -20ma, i b = -2ma i c = -20ma, i b = -2ma v ce = -20v, i c = -10ma v cb = -20v, i e =0 f=1mhz -300 -200 -300 -200 -5 25 40 25 50 -0.25 -0.25 -0.10 -0.50 -0.90 6 8 v v v v v m a m a m a v v mhz pf pf to-92 1. emitter 2. base 3. collector ? 1999 fairchild semiconductor corporation rev. b
ksp92/ 93 pnp epitaxial silicon transistor
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